SEMICONDUCTOR COMPONENT HAVING A DOPANT REGION FORMED BY A DOPANT COMPOSED OF AN OXYGEN / VACANCY COMPLEX

SEMICONDUCTOR COMPONENT HAVING A DOPANT REGION FORMED BY A DOPANT COMPOSED OF AN OXYGEN / VACANCY COMPLEX

A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a...

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Bibliographische Detailangaben
Hauptverfasser: SCHUSTEREDER WERNER, NEIDHART THOMAS, SCHULZE HANS-JOACHIM, NIEDERNOSTHEIDE FRANZ JOSEF, SUSITI ALEXANDER
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor component includes a semiconductor body having a first side and a second side opposite the first side. In the semiconductor body, a dopant region is formed by a dopant composed of an oxygen complex. The dopant region extends over a section L having a length of at least 10 μm along a direction from the first side to the second side. The dopant region has an oxygen concentration in a range of 1×1017 cm−3 to 5×1017 cm−3 over the section L.