SURFACE TREATMENT IN A DEP-ETCH-DEP PROCESS

SURFACE TREATMENT IN A DEP-ETCH-DEP PROCESS

Embodiments of present invention provide a method of forming semiconductor devices. The method includes creating an opening in a semiconductor structure; depositing a first layer of metal inside the opening with the first layer of metal partially filling up the opening; modifying a top surface of th...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: BAO RUQIANG, PAPADATOS FILIPPOS, STAMBAUGH DANIEL P, FERRER DOMINGO A
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of present invention provide a method of forming semiconductor devices. The method includes creating an opening in a semiconductor structure; depositing a first layer of metal inside the opening with the first layer of metal partially filling up the opening; modifying a top surface of the first layer of metal in an etching process; passivating the modified top surface of the first layer of metal to form a passivation layer; and depositing a second layer of metal directly on top of the passivation layer.