SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

According to one embodiment, a semiconductor device includes a first complementary semiconductor device provided on a semiconductor substrate, and including a CMOS circuit, a metal electrode provided above the first complementary semiconductor device, a semiconductor layer provided above the metal e...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TEZUKA TSUTOMU, FURUSE KIYOE, KAMIMUTA YUUICHI, IKEDA KEIJI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor device includes a first complementary semiconductor device provided on a semiconductor substrate, and including a CMOS circuit, a metal electrode provided above the first complementary semiconductor device, a semiconductor layer provided above the metal electrode, including an nMOS region and a pMOS region separated from each other, and containing Ge; and a second complementary semiconductor device including an nMOSFET provided on the first portion of the semiconductor layer and a pMOSFET provided on the second portion of the semiconductor layer.