PREDICTIVE METHOD OF MATCHING TWO PLASMA REACTORS

PREDICTIVE METHOD OF MATCHING TWO PLASMA REACTORS

Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset α in tilt angle α between the non-uni...

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Bibliographische Detailangaben
Hauptverfasser: KHAN ANISUL H, SARAF GAURAV, CHANG WEN TEH, ABOOAMERI FARID, HERSCH BRADLEY SCOTT, YANG XIAWAN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Etch rate distribution non-uniformities are predicted for a succession of hardware tilt angles of the RF source applicator relative to the workpiece, and the behavior is modeled as a non-uniformity function for each one of at least two plasma reactors. An offset α in tilt angle α between the non-uniformity functions of the two plasma reactors is detected. The two reactors are then matched by performing a hardware tilt in one of them through a tilt angle equal to the offset α.