METHODS FOR DICING A COMPOUND SEMICONDUCTOR WAFER, AND DICED WAFERS AND DIE OBTAINED THEREBY

METHODS FOR DICING A COMPOUND SEMICONDUCTOR WAFER, AND DICED WAFERS AND DIE OBTAINED THEREBY

Methods are provided for using masking techniques and plasma etching techniques to dice a compound semiconductor wafer into dies. Using these methods allows compound semiconductor die to be obtained that have smooth side walls, a variety of shapes and dimensions, and a variety of side wall profiles....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: MCINTYRE DAVID G, PEH CHEE SIONG, NG CHIEW HAI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods are provided for using masking techniques and plasma etching techniques to dice a compound semiconductor wafer into dies. Using these methods allows compound semiconductor die to be obtained that have smooth side walls, a variety of shapes and dimensions, and a variety of side wall profiles. In addition, by using these techniques to perform the dicing operations, the locations of features of the die relative to the side walls are ascertainable with certainty such that one or more of the side walls can be used as a passive alignment feature to precisely align one or more of the die with an external device.