CONTINUOUS TUNING OF ERBIUM SILICIDE METAL GATE EFFECTIVE WORK FUNCTION VIA A PVD NANOLAMINATE APPROACH FOR MOSFET APPLICATIONS

CONTINUOUS TUNING OF ERBIUM SILICIDE METAL GATE EFFECTIVE WORK FUNCTION VIA A PVD NANOLAMINATE APPROACH FOR MOSFET APPLICATIONS

Erbium silicide layers can be used in CMOS transistors in which the work function of the erbium silicide layers can be tuned for use in PMOS and NMOS devices. A nano-laminate sputtering approach can be used in which silicon and erbium layers are alternatingly deposited to determine optimum layer pro...

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Bibliographische Detailangaben
Hauptverfasser: KARLSSON OLOV, HONG ZHENDONG, BODKE ASHISH
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Erbium silicide layers can be used in CMOS transistors in which the work function of the erbium silicide layers can be tuned for use in PMOS and NMOS devices. A nano-laminate sputtering approach can be used in which silicon and erbium layers are alternatingly deposited to determine optimum layer properties, composition profiles, and erbium to silicon ratios for a particular gate stack.