HIGH ASPECT RATIO ETCH WITH COMBINATION MASK

HIGH ASPECT RATIO ETCH WITH COMBINATION MASK

A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask lay...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: REDDY SIRISH K, GUHA JOYDEEP, CHATTOPADHYAY KAUSHIK, MOUNTSIER THOMAS W, LILL THORSTEN, VAHEDI VAHID, SINGH HARMEET, EPPLER AARON
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method for etching features in a stack is provided. A combination hardmask is formed by forming a first hardmask layer comprising carbon or silicon oxide over the stack, forming a second hardmask layer comprising metal over the first hardmask layer, and patterning the first and second hardmask layers. The stack is etched through the combination hardmask.