SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR MEMORY DEVICE AND METHOD FOR MANUFACTURING SAME

According to one embodiment, a semiconductor memory device includes: a first semiconductor region extending in a first direction; second semiconductor regions extending in a second direction crossing the first direction from the first semiconductor region and arranged in the first direction; and a f...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: OKUMURA YUSUKE, KAI NAOKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:According to one embodiment, a semiconductor memory device includes: a first semiconductor region extending in a first direction; second semiconductor regions extending in a second direction crossing the first direction from the first semiconductor region and arranged in the first direction; and a first element isolation region provided between the second semiconductor regions. A width of the first semiconductor region in the second direction is wider than a width of the second semiconductor region in the first direction.