SELF-ALIGNED DIELECTRIC ISOLATION FOR FINFET DEVICES

SELF-ALIGNED DIELECTRIC ISOLATION FOR FINFET DEVICES

Embodiments of the present invention provide a method of forming semiconductor structure. The method includes forming a set of device features on top of a substrate; forming a first dielectric layer directly on top of the set of device features and on top of the substrate, thereby creating a height...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HORAK DAVID VACLAV, STANDAERT THEODORUS EDUARDUS, BERGENDAHL MARC ADAM, KOBURGER, III CHARLES WILLIAM, CHENG KANGGUO, KHAKIFIROOZ ALI, PONOTH SHOM, CAI XIUYU, XIE RUILONG, YANG CHIHAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Embodiments of the present invention provide a method of forming semiconductor structure. The method includes forming a set of device features on top of a substrate; forming a first dielectric layer directly on top of the set of device features and on top of the substrate, thereby creating a height profile of the first dielectric layer measured from a top surface of the substrate, the height profile being associated with a pattern of an insulating structure that fully surrounds the set of device features; and forming a second dielectric layer in areas that are defined by the pattern to create the insulating structure. A structure formed by the method is also disclosed.