CONTAINER CONTAINING A COBALT CARBONYL COMPLEX AND COBALT CARBONYL COMPLEX COMPOSITION

A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SUMIYA KOUJI, NISHIMURA HIDEKI, MATSUKI YASUO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSESC01D OR C01F DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL INORGANIC CHEMISTRY METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A container containing a cobalt carbonyl complex and a gas that contains carbon monoxide, and a cobalt carbonyl complex composition comprising a cobalt carbonyl complex and a solvent, wherein the concentration of carbon monoxide dissolved in the solvent is 0.001 to 1 wt %. Since the cobalt carbonyl complex contained in the above container or the above composition can retain its sublimation properties for a long time without being converted into a stable complex, when a cobalt film is formed by chemical vapor deposition using the container and the composition, a high-quality film can be formed by a simple process, and the production cost of the cobalt film can be reduced due to high use efficiency of the precursor.