THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RATIO DEEP TRENCHES

THERMALLY STABLE HIGH-K TETRAGONAL HFO2 LAYER WITHIN HIGH ASPECT RATIO DEEP TRENCHES

A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phas...

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Bibliographische Detailangaben
Hauptverfasser: KRISHNAN SIDDARTH A, DIRAHOUI BACHIR, KWON OH-JUNG, KRISHNAN RISHIKESH, CHUDZIK MICHAEL P, PARRIES PAUL C, YAN HONGWEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A trench structure that in one embodiment includes a trench present in a substrate, and a dielectric layer that is continuously present on the sidewalls and base of the trench. The dielectric layer has a dielectric constant that is greater than 30. The dielectric layer is composed of tetragonal phase hafnium oxide with silicon present in the grain boundaries of the tetragonal phase hafnium oxide in an amount ranging from 3 wt. % to 20 wt. %.