METHOD FOR REDUCING LATERAL EXTRUSION FORMED IN SEMICONDUCTOR STRUCTURES AND SEMICONDUCTOR STRUCTURES FORMED THEREOF

Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a p...

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Bibliographische Detailangaben
Hauptverfasser:	ADDERLY SHAWN A, CZABAJ BRIAN M, GAMBINO JEFFREY P, DELIBAC DANIEL A, MOON MATTHEW D, THOMAS DAVID C
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Aspects of the present invention relate to method for reducing lateral extrusion formed in semiconductor structures and semiconductor structures formed thereof. Various embodiments include a method for reducing lateral extrusion formed in semiconductor structures. The method can include removing a portion of a first lateral extrusion in an aluminum layer of the semiconductor structure, and determining a post-removal thickness of a dielectric layer positioned adjacent the aluminum layer. The post-removal thickness may be determined subsequent to the removing of the portion of the first lateral extrusion. The method can also include determining a difference between the post-removal thickness of the dielectric layer and a pre-removal thickness of the dielectric layer.