HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF

HIGH VOLTAGE METAL-OXIDE-SEMICONDUCTOR TRANSISTOR DEVICE AND MANUFACTURING METHOD THEREOF

A lateral double-diffused metal-oxide-semiconductor transistor device includes a substrate having at least a shallow trench isolation formed therein, an epitaxial layer encompassing the STI in the substrate, a gate, and a drain region and a source region formed in the substrate at respective two sid...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LIU TSENG-HSUN, LEE CHIU-LING, CHEN KUAN-YU, CHEN WEI-LIN, LEE CHIU-TE, WANG CHIHUNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A lateral double-diffused metal-oxide-semiconductor transistor device includes a substrate having at least a shallow trench isolation formed therein, an epitaxial layer encompassing the STI in the substrate, a gate, and a drain region and a source region formed in the substrate at respective two sides of the gate. The epitaxial layer, the source region and the drain region include a first conductivity type. The gate includes a first portion formed on the substrate and a second portion extending into the STI.