INTEGRATED CIRCUIT STRUCTURE HAVING SELECTIVELY FORMED METAL CAP

An integrated circuit structure with a selectively formed and at least partially oxidized metal cap over a gate. In one embodiment, an integrated circuit structure has: a substrate; a metal gate located over the substrate; at least one liner layer over the substrate and substantially surrounding the...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	HORAK DAVID V, PONOTH SHOM, KOBURGER CHARLES W, YANG CHIHAO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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