INTEGRATED CIRCUIT STRUCTURE HAVING SELECTIVELY FORMED METAL CAP

INTEGRATED CIRCUIT STRUCTURE HAVING SELECTIVELY FORMED METAL CAP

An integrated circuit structure with a selectively formed and at least partially oxidized metal cap over a gate. In one embodiment, an integrated circuit structure has: a substrate; a metal gate located over the substrate; at least one liner layer over the substrate and substantially surrounding the...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: HORAK DAVID V, PONOTH SHOM, KOBURGER CHARLES W, YANG CHIHAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:An integrated circuit structure with a selectively formed and at least partially oxidized metal cap over a gate. In one embodiment, an integrated circuit structure has: a substrate; a metal gate located over the substrate; at least one liner layer over the substrate and substantially surrounding the metal gate; and an at least partially oxidized etch stop layer located directly over the metal gate, the etch stop layer including at least one of cobalt (Co), manganese (Mn), tungsten (W), iridium (Ir), rhodium (Rh) or ruthenium (Ru).