MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a su...

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Hauptverfasser: MATSUI YUKITERU, EDA HAJIME, GAWASE AKIFUMI
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creator MATSUI YUKITERU
EDA HAJIME
GAWASE AKIFUMI
description In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.
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fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015004878A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015004878A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015004878A13</originalsourceid><addsrcrecordid>eNrjZNDxdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhqYGBiYW5haOhsbEqQIAPvkmRg</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><source>esp@cenet</source><creator>MATSUI YUKITERU ; EDA HAJIME ; GAWASE AKIFUMI</creator><creatorcontrib>MATSUI YUKITERU ; EDA HAJIME ; GAWASE AKIFUMI</creatorcontrib><description>In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.</description><language>eng</language><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES ; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS ; GRINDING ; MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING ; PERFORMING OPERATIONS ; POLISHING ; TRANSPORTING</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150101&amp;DB=EPODOC&amp;CC=US&amp;NR=2015004878A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76293</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150101&amp;DB=EPODOC&amp;CC=US&amp;NR=2015004878A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>MATSUI YUKITERU</creatorcontrib><creatorcontrib>EDA HAJIME</creatorcontrib><creatorcontrib>GAWASE AKIFUMI</creatorcontrib><title>MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><description>In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.</description><subject>DRESSING OR CONDITIONING OF ABRADING SURFACES</subject><subject>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</subject><subject>GRINDING</subject><subject>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</subject><subject>PERFORMING OPERATIONS</subject><subject>POLISHING</subject><subject>TRANSPORTING</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZNDxdfQLdXN0DgkN8vRzV_B1DfHwd1Hwd1MIdvX1dPb3cwl1DvEPUnBxDfN0duVhYE1LzClO5YXS3AzKbq4hzh66qQX58anFBYnJqXmpJfGhwUYGhqYGBiYW5haOhsbEqQIAPvkmRg</recordid><startdate>20150101</startdate><enddate>20150101</enddate><creator>MATSUI YUKITERU</creator><creator>EDA HAJIME</creator><creator>GAWASE AKIFUMI</creator><scope>EVB</scope></search><sort><creationdate>20150101</creationdate><title>MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><author>MATSUI YUKITERU ; EDA HAJIME ; GAWASE AKIFUMI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015004878A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>DRESSING OR CONDITIONING OF ABRADING SURFACES</topic><topic>FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS</topic><topic>GRINDING</topic><topic>MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING</topic><topic>PERFORMING OPERATIONS</topic><topic>POLISHING</topic><topic>TRANSPORTING</topic><toplevel>online_resources</toplevel><creatorcontrib>MATSUI YUKITERU</creatorcontrib><creatorcontrib>EDA HAJIME</creatorcontrib><creatorcontrib>GAWASE AKIFUMI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>MATSUI YUKITERU</au><au>EDA HAJIME</au><au>GAWASE AKIFUMI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE</title><date>2015-01-01</date><risdate>2015</risdate><abstract>In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.</abstract><oa>free_for_read</oa></addata></record>
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subjects DRESSING OR CONDITIONING OF ABRADING SURFACES
FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
GRINDING
MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING
PERFORMING OPERATIONS
POLISHING
TRANSPORTING
title MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-23T21%3A55%3A26IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=MATSUI%20YUKITERU&rft.date=2015-01-01&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015004878A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true