MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a su...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUI YUKITERU, EDA HAJIME, GAWASE AKIFUMI
Format:	Patent
Sprache:	eng
Schlagworte:	DRESSING OR CONDITIONING OF ABRADING SURFACES FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS GRINDING MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING PERFORMING OPERATIONS POLISHING TRANSPORTING
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Beschreibung
Zusammenfassung:	In accordance with an embodiment, a manufacturing method of a semiconductor device includes forming a polish target film on a substrate and conducting a CMP process for the polish target film. The conducting the CMP process includes bringing a surface of the polish target film into contact with a surface of a polishing pad with a negative Rsk value, and adjusting friction dependency on polishing speed between the polish target film and the polishing pad to a value that restrains the occurrence of a stick slip to polish the polish target film.