SEMICONDUCTOR DEVICES INCLUDING DEVICE ISOLATION STRUCTURES AND METHOD OF FORMING THE SAME

Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and atte...

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Bibliographische Detailangaben
Hauptverfasser: HAN TAE-JONG, KIM DAEWOONG, KIM HONGSUK, YANG JUNKYU
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:Provided are semiconductor devices and methods of forming the same. A device isolation structure in the semiconductor device includes a gap region. A dielectric constant of a vacuum or an air in the gap region is smaller than a dielectric constant of an oxide layer and, as a result coupling and attendant interference between adjacent cells may be reduced.