DEVICE FOR SPOT SIZE MEASUREMENT AT WAFER LEVEL USING A KNIFE EDGE AND A METHOD FOR MANUFACTURING SUCH A DEVICE

The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plan...

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Bibliographische Detailangaben
Hauptverfasser: SCHEFFERS PAUL IJMERT, MEIJER JAN ANDRIES, SARR ABDOU
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:The invention relates to a device for spot size measurement at wafer level in a multi charged particle beam lithography system. The device comprises a knife edge structure on top of a scintillating material, such a YAG material. The knife edge structure is arranged in a Si wafer which has a top plane at a sharp angle to a (1 1 0) plane of the Si. In an embodiment the angle is in the range from 2 to 4 degrees, preferably in the range from 2.9-3.1 degrees. The invention relates in addition to a method for manufacturing a device for spot size measurement at wafer level in a multi charged particle beam lithography system.