CLEANING METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

CLEANING METHOD FOR SEMICONDUCTOR DEVICE FABRICATION

A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The clean...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: WU SUNG-HSUN, JANG SYUN-MING, CHEN CHAONG, YEH MING-HSI, CHOU BO-WEI
Format: Patent
Sprache:eng
Schlagworte:
CLEANING
CLEANING IN GENERAL
PERFORMING OPERATIONS
PREVENTION OF FOULING IN GENERAL
TRANSPORTING
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Beschreibung
Zusammenfassung:A method of cleaning a substrate such as semiconductor substrate for IC fabrication is described that includes cleaning the semiconductor substrate with a first mixture of ozone and one of an acid and a base, followed by a second mixture of ozone and the other one of the acid and the base. The cleaning mixtures may further include de-ionized water. In an embodiment, the mixture is sprayed onto a heated substrate surface. The acid may be HF; the base may be NH4OH.