TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL

TRANSISTOR PERFORMANCE USING A TWO-STEP DAMAGE ANNEAL

A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the semiconductor device. A second thermal treatment procedure is consecutively performed on the semiconductor device to...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: NIIMI HIROAKI, VARGHESE AJITH, JACOBS JARVIS BENJAMIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A two-step thermal treatment method consists of performing ion implantation in a silicon substrate of the semiconductor device. A first thermal treatment procedure is performed on the semiconductor device. A second thermal treatment procedure is consecutively performed on the semiconductor device to reduce damage produced by the ion implantation.