RESIST FOR ELECTRON BEAM AND OPTICAL LITHOGRAPHY

The present invention describes a first generation dendrimers useful in lithography, comprising 1,3,5-trisbromo-methylbenzene as the core and dense, bulky, rigid units selected from trisphenol (1, 1, 1-tris-p-4-hydroxyphenyl ethane), bisphenol-A and 1,5-dihydroxy naphthalene units at the periphery,...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: SANGAVE DADASAHEB VITTHAL, KULKARNI MOHAN GOPALKRISHNA
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:The present invention describes a first generation dendrimers useful in lithography, comprising 1,3,5-trisbromo-methylbenzene as the core and dense, bulky, rigid units selected from trisphenol (1, 1, 1-tris-p-4-hydroxyphenyl ethane), bisphenol-A and 1,5-dihydroxy naphthalene units at the periphery, wherein the peripheral aromatic rigid molecules are connected to the central core through an ether linkage.