MEMORY CELL SUPPLY VOLTAGE REDUCTION PRIOR TO WRITE CYCLE

MEMORY CELL SUPPLY VOLTAGE REDUCTION PRIOR TO WRITE CYCLE

An integrated circuit device includes a memory cell coupled to a supply voltage line to receive a supply voltage and a voltage control circuit operable to reduce a magnitude of the supply voltage prior to a write cycle to the memory cell. The voltage control circuit includes a first capacitor that i...

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Bibliographische Detailangaben
1. Verfasser: RILEY JOHN R
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Zusammenfassung:An integrated circuit device includes a memory cell coupled to a supply voltage line to receive a supply voltage and a voltage control circuit operable to reduce a magnitude of the supply voltage prior to a write cycle to the memory cell. The voltage control circuit includes a first capacitor that is selectively coupled between a supply voltage line and a first reference supply voltage line of the integrated circuit device in anticipation of a write cycle to the memory cell.