SELF-CLEANING RADIO FREQUENCY PLASMA SOURCE

A self-cleaning radio frequency (RF) plasma source for a semiconductor manufacturing process is described. Various examples provide an RF plasma source comprising an RF antenna and a rotatable dielectric sleeve disposed around the RF antenna. The dielectric is positioned between a process chamber and cleaning chamber such that portions of the surface of the dielectric may be exposed to either the process chamber or the cleaning chamber. As material is deposited on the outer surface of the dielectric in the process chamber, the dielectric sleeve is rotated so that the portion containing the buildup is exposed to the cleaning chamber. A sputtering process in the cleaning chamber removes the buildup from the surface of the sleeve. The dielectric sleeve is then rotated so that it exposed to the process chamber. Other embodiments are disclosed and claimed.