SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

According to one embodiment, there is provided a semiconductor device including a first capacitance electrode, a second capacitance electrode, and a depletion layer. The first capacitance electrode is buried in a hole via an insulating film. The hole is formed in a semiconductor substrate. The secon...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: ENDO MITSUYOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
GENERATION OF NOISE BY SUCH CIRCUITS
GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING,BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN ANON-SWITCHING MANNER
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:According to one embodiment, there is provided a semiconductor device including a first capacitance electrode, a second capacitance electrode, and a depletion layer. The first capacitance electrode is buried in a hole via an insulating film. The hole is formed in a semiconductor substrate. The second capacitance electrode is formed on a front surface side or on a back surface side of the semiconductor substrate so as to be separated from the first capacitance electrode. The depletion layer forming mechanism includes a control electrode, and forms a depletion layer between the first capacitance electrode and the second capacitance electrode.