SEMICONDUCTOR STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT

SEMICONDUCTOR STRUCTURE FOR EXTREME ULTRAVIOLET ELECTROSTATIC CHUCK WITH REDUCED CLAMPING EFFECT

The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline sil...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHEN CHIAN, KAO TZU-WEI, HSU CHIA-HAO, FU TZUNGI, LIN YU CHAO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:The present disclosure provides one embodiment of a semiconductor structure. The semiconductor structure includes a semiconductor substrate having a front surface and a backside surface; integrated circuit features formed on the front surface of the semiconductor substrate; and a polycrystalline silicon layer disposed on the backside surface of the semiconductor substrate.