FinFETs with Regrown Source/Drain and Methods for Forming the Same

FinFETs with Regrown Source/Drain and Methods for Forming the Same

A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epita...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KAO TZU-WEI, CHEN RYAN CHIA-JEN, LIU ERIC CHIH-FANG, CHEN CHAONG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method includes etching a semiconductor substrate to form a recess in the semiconductor substrate, and reacting a surface layer of the semiconductor substrate to generate a reacted layer. The surface layer of the semiconductor substrate is in the recess. The reacted layer is then removed. An epitaxy is performed to grow a semiconductor material in the recess.