AMBIENT LIGHT SENSING WITH STACKED PHOTODIODE

A stacked photodiode structure comprises a first-conductivity-type substrate, a second-conductivity-type well region and a first-conductivity-type well region. The first-conductivity-type substrate has a first surface for light incidence and a grounding terminal. The second-conductivity-type well re...

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Bibliographische Detailangaben
Hauptverfasser:	CHUA SENG-YEE, ASUNCION JOHN JULIUS DE LEON
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A stacked photodiode structure comprises a first-conductivity-type substrate, a second-conductivity-type well region and a first-conductivity-type well region. The first-conductivity-type substrate has a first surface for light incidence and a grounding terminal. The second-conductivity-type well region is formed in the first-conductivity-type substrate and adjacent to the first surface. The first-conductivity-type well region is formed in the second-conductivity-type well region and adjacent to the first surface. A PN junction between the first-conductivity-type well region and the second-conductivity-type well region generates free electrons responsive to visible light spectrum. A PN junction between the second-conductivity-type well region and the first-conductivity-type substrate generates free holes and free electrons responsive to mainly IR light. The difference between a first photocurrent generated from an anode terminal of the first-conductivity-type well region and a second photocurrent generated from a cathode terminal of the second-conductivity-type well region represents the intensity of incident IR light.