THIN-FILM TRANSISTOR ACTIVE DEVICE AND METHOD FOR MANUFACTURING SAME

The present invention provides a thin-film transistor active device and a method for manufacturing the device. The thin-film transistor active device includes a substrate and a plurality of thin-film transistors formed on the substrate. Each of thin-film transistors includes a gate insulation layer and an oxide semiconductor active layer. The gate insulation layer is a silicon oxide layer having refractivity between 1.43-1.47. During the formation of the gate insulation layer, the flowrate ration between nitrous oxide and silicon tetrahydride in chemical vapor deposition is controlled to be greater than 30% so as to control the refractivity of the gate insulation layer so formed of silicon oxide to be between 1.43-1.47; meanwhile, the content of N-H bond in the gate insulation layer is reduced so as to effectively prevent the high interface trap density between the gate insulation layer and the oxide semiconductor layer caused by high content of N-H bond.