PATTERNING OF MAGNETIC TUNNEL JUNCTION (MTJ) FILM STACKS

PATTERNING OF MAGNETIC TUNNEL JUNCTION (MTJ) FILM STACKS

Chemical modification of non-volatile magnetic random access memory (MRAM) magnetic tunnel junctions (MTJs) for film stack etching is described. In an example, a method of etching a MTJ film stack includes modifying one or more layers of the MTJ film stack with a phosphorous trifluoride (PF3) source...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: NEMANI SRINIVAS D, LING MANG-MANG, DOAN KHOI, KIM JISOO
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Chemical modification of non-volatile magnetic random access memory (MRAM) magnetic tunnel junctions (MTJs) for film stack etching is described. In an example, a method of etching a MTJ film stack includes modifying one or more layers of the MTJ film stack with a phosphorous trifluoride (PF3) source to provide modified regions of the MTJ film stack. The modified regions of the MTJ film stack are removed by a plasma etch process.