CURRENT RAMPING AND CURRENT PULSING ENTRY OF SUBSTRATES FOR ELECTROPLATING

In some method and apparatus disclosed herein, the profile of current delivered to the substrate provides a relatively uniform current density on the substrate surface during immersion. These methods include controlling the current density applied across a substrate's surface during immersion b...

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Bibliographische Detailangaben
Hauptverfasser:	OPOCENSKY EDWARD C, SPURLIN TIGHE A, REID JON, MAYER STEVEN T, ZHOU JIAN
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS THEREFOR BASIC ELECTRIC ELEMENTS CHEMISTRY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROFORMING ELECTROLYTIC OR ELECTROPHORETIC PROCESSES METALLURGY PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTIONOF COATINGS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	In some method and apparatus disclosed herein, the profile of current delivered to the substrate provides a relatively uniform current density on the substrate surface during immersion. These methods include controlling the current density applied across a substrate's surface during immersion by dynamically controlling the current to account for the changing substrate surface area in contact with electrolyte during immersion. In some cases, current density pulses and/or steps are used during immersion, as well.