SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

Possible to form an opening having a sufficient opening diameter in a region sandwiched between a pair of bit lines and thereby provide a semiconductor device in which a high-quality contact using the opening is formed. The semiconductor device includes a first conductive layer, a first interlayer insulating film, a bit line, a first insulating film, a second interlayer insulating film, and a second conductive layer. The first insulating film that covers a side surface of the bit line has a portion perpendicular to a main surface of a semiconductor substrate in a region lower than a position lower than an uppermost portion of the first insulating film by a thickness, in a direction along the main surface of the semiconductor substrate, of the first insulating film that covers the side surface of the bit line at a lowermost portion of the bit line.