BORON-DOPED ZINC OXIDE SPUTTERING TARGET AND ITS APPLICATION

A boron-doped zinc oxide sputtering target, BZO sputtering target, is provided to deposit a BZO film by direct current sputtering. The BZO sputtering target has an amount of B/(B+Zn) ranging from 1.15 atomic % to 6.74 atomic % and a second phase ranging from 2% to 25% relative to a total area of the...

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Hauptverfasser: LIU YEN-MING, CHANG CHIH-YUNG, SHIU HUI-YING
Format: Patent
Sprache:eng
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Zusammenfassung:A boron-doped zinc oxide sputtering target, BZO sputtering target, is provided to deposit a BZO film by direct current sputtering. The BZO sputtering target has an amount of B/(B+Zn) ranging from 1.15 atomic % to 6.74 atomic % and a second phase ranging from 2% to 25% relative to a total area of the matrix phase and the second phase. Accordingly, a BZO film having a transmittance higher than 80% within a wavelength from 400 nanometers to 1100 nanometers and a resistivity less than 1×10−2 -cm can be prepared by DC sputtering the BZO sputtering target.