Thin-Film Transistor Active Device

The present invention relates to a thin-film transistor (TFT) active device. The TFT active device includes: a gate electrode; a gate insulation layer covering the gate electrode; an oxide semiconductor layer formed on the gate insulation layer; a first protection layer formed on the oxide semiconductor layer; a source/drain electrode electrically connected with the oxide semiconductor layer; and a second protection layer covering the source/drain electrode. At least one of the gate insulation layer, the first protection layer, and the second protection layer is made of a nitride of silicon and has a refractive index between 2.0-3.0. The TFT active device according to the present invention helps suppressing diffusion of metal ions from a metal electrode and reducing hydrogen content of the GI layer, the ES layer, or the PV layer so as to effectively improve the stability of the manufacture operation of TFT.