VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF FORMING THE SAME

VARIABLE RESISTANCE MEMORY DEVICES AND METHODS OF FORMING THE SAME

Semiconductor devices, and methods of fabricating the same, include a metal-containing layer on a semiconductor layer, and a barrier-lowering portion between the metal-containing layer and the semiconductor layer. The barrier-lowering portion lowers a Schottky barrier height between the metal-contai...

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Bibliographische Detailangaben
Hauptverfasser: NAM SEOKWOO, LIM HANJIN, HAN JAEJONG, LEE KONGSOO, JEON INSANG, YOO WONSEOK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Semiconductor devices, and methods of fabricating the same, include a metal-containing layer on a semiconductor layer, and a barrier-lowering portion between the metal-containing layer and the semiconductor layer. The barrier-lowering portion lowers a Schottky barrier height between the metal-containing layer and the semiconductor layer below a Schottky barrier height between a metal silicide layer and the semiconductor layer.