PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

PHASE-CHANGE RANDOM ACCESS MEMORY DEVICE AND METHOD OF MANUFACTURING THE SAME

A phase-change random access memory (PRAM) device and a method of manufacturing the same are provided. The PRAM device includes a semiconductor substrate in which a switching device is formed, a lower electrode configured to be formed on the switching device and having a void formed in a portion of...

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Bibliographische Detailangaben
1. Verfasser: KIM DOO KANG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A phase-change random access memory (PRAM) device and a method of manufacturing the same are provided. The PRAM device includes a semiconductor substrate in which a switching device is formed, a lower electrode configured to be formed on the switching device and having a void formed in a portion of an upper surface thereof, and a phase-change layer configured to be formed on the lower electrode having the void.