SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

A semiconductor device capable of increasing ON current while reducing channel resistance and allowing transistors to operate independently and stably, having a fin formed to protrude from the bottom of a gate electrode trench, a gate insulating film covering the surfaces of the gate electrode trenc...

Ausführliche Beschreibung

Bibliographische Detailangaben

Hauptverfasser:	OYU KIYONORI, MORI KAZUTO, OKONOGI KENSUKE
Format:	Patent
Sprache:	eng
Schlagworte:	ELECTRICITY
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!