CONFINED RESISTANCE VARIABLE MEMORY CELLS AND METHODS

CONFINED RESISTANCE VARIABLE MEMORY CELLS AND METHODS

Methods, devices, and systems associated with resistance variable memory device structures are described herein. In one or more embodiments, a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion o...

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Bibliographische Detailangaben
1. Verfasser: BIAN ZAILONG
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
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Beschreibung
Zusammenfassung:Methods, devices, and systems associated with resistance variable memory device structures are described herein. In one or more embodiments, a method of forming a confined resistance variable memory cell structure includes forming a resistance variable material such that a first unmodified portion of the resistance variable material contacts a bottom electrode and a second unmodified portion of the resistance variable material contacts a top electrode.