CONTINUOUS VIA FOR POWER GRID

CONTINUOUS VIA FOR POWER GRID

A power grid of a Very Large Scale Integration (VLSI) circuit includes a sandwich structure in a cell. The sandwich structure includes a first metal layer configured to carry current along a lateral axis, and a second metal layer, parallel to the first metal layer with a gap therebetween. The second...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
1. Verfasser: WARNOCK JAMES D
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A power grid of a Very Large Scale Integration (VLSI) circuit includes a sandwich structure in a cell. The sandwich structure includes a first metal layer configured to carry current along a lateral axis, and a second metal layer, parallel to the first metal layer with a gap therebetween. The second metal layer carries current along a second lateral axis which is parallel to the lateral axis of the first metal layer. The sandwich structure also includes interconnect material disposed as a continuous via throughout the gap, the continuous via interconnecting the first metal layer and the second metal layer throughout the gap.