ARRANGEMENT FOR MANUFACTURING CRYSTALLINE SILICON INGOTS

The present invention relates to an arrangement for manufacturing crystalline silicon ingots by directional solidification, where the melt and carbonaceous structural parts of the crystallisation furnace is protected from the fumes of the melt by applying a gas conduit which leads the fumes directly...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser:	JOHANSEN KAI, VLADIMIROV EGOR, HOMAYONIFAR POURIA, TEIXEIRA ALEXANDRE
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE APPARATUS THEREFOR BLASTING CHEMISTRY CRYSTAL GROWTH DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE FURNACES GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS HEATING KILNS LIGHTING MECHANICAL ENGINEERING METALLURGY OVENS PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE REFINING BY ZONE-MELTING OF MATERIAL RETORTS SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE SINGLE-CRYSTAL-GROWTH TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION TECHNICAL SUBJECTS COVERED BY FORMER USPC TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL WEAPONS
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Beschreibung
Zusammenfassung:	The present invention relates to an arrangement for manufacturing crystalline silicon ingots by directional solidification, where the melt and carbonaceous structural parts of the crystallisation furnace is protected from the fumes of the melt by applying a gas conduit which leads the fumes directly out of the directional solidification compartment of the furnace.