High efficiency CZTSe by a two-step approach

High efficiency CZTSe by a two-step approach

Methods of forming CZTS absorber layers in a TFPV device with a graded bandgap with or without a graded concentration are provided. In general, a Cu-Zn-Sn-(S, Se) precursor film is formed by sputtering. The Cu-Zn-Sn-(S, Se) precursor film can be formed as a single layer or as a multilayer stack. The...

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Bibliographische Detailangaben
Hauptverfasser: VAN DUREN JEROEN, LIANG HAIFAN, CARDOZO BEN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:Methods of forming CZTS absorber layers in a TFPV device with a graded bandgap with or without a graded concentration are provided. In general, a Cu-Zn-Sn-(S, Se) precursor film is formed by sputtering. The Cu-Zn-Sn-(S, Se) precursor film can be formed as a single layer or as a multilayer stack. The composition may be uniform or graded throughout the thickness of the film. In some embodiments, the sputtering is performed in a reactive atmosphere including a chalcogen source (e.g. H2S, H2Se, etc.). The films, in conjunction with a subsequent selenization or anneal process, are converted to an absorber layer.