SOL-GEL AND MASK PATTERNING FOR THIN-FILM CAPACITOR FABRICATION, THIN-FILM CAPACITORS FABRICATED THEREBY, AND SYSTEMS CONTAINING SAME

SOL-GEL AND MASK PATTERNING FOR THIN-FILM CAPACITOR FABRICATION, THIN-FILM CAPACITORS FABRICATED THEREBY, AND SYSTEMS CONTAINING SAME

A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-al...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: PALANDUZ CENGIZ A, SEH HUANKIAT, MIN YONGKI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
CALCULATING
COMPUTING
COUNTING
ELECTRIC DIGITAL DATA PROCESSING
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
PHYSICS
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A process of forming a thin-film capacitor that includes sol-gel patterning of a dielectric thin film on a first electrode, lift-off removal of unwanted dielectric thin film, and mating the dielectric thin film with a second electrode. The thin-film capacitor exhibits a substantially uniform heat-altered morphology along a line defined by a characteristic dimension thereof. A computing system is also disclosed that includes the thin-film capacitor.