CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR SHALLOW TRENCH ISOLATION (STI) APPLICATIONS AND METHODS OF MAKING THEREOF

CHEMICAL MECHANICAL POLISHING (CMP) COMPOSITION FOR SHALLOW TRENCH ISOLATION (STI) APPLICATIONS AND METHODS OF MAKING THEREOF

Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical...

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Bibliographische Detailangaben
Hauptverfasser: USMANI SAIFI, SCHLUETER JAMES ALLEN, WINCHESTER STEVEN CHARLES, HUGHES JOHN EDWARD QUINCY, SHI XIAOBO, CASTILLO, II DANIEL HERNANDEZ, CHOO JAE OUK, MARSELLA JOHN ANTHONY, LEDENBACH LAURA, ZHOU HONGJUN, SCHWARTZ JO-ANN TERESA
Format: Patent
Sprache:eng
Schlagworte:
ADHESIVES
CHEMISTRY
COMPOUNDS OF THE METALS BERYLLIUM, MAGNESIUM, ALUMINIUM,CALCIUM, STRONTIUM, BARIUM, RADIUM, THORIUM, OR OF THERARE-EARTH METALS
DYES
INORGANIC CHEMISTRY
METALLURGY
MISCELLANEOUS APPLICATIONS OF MATERIALS
MISCELLANEOUS COMPOSITIONS
NATURAL RESINS
PAINTS
POLISHES
POLISHING COMPOSITIONS OTHER THAN FRENCH POLISH
SKI WAXES
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Beschreibung
Zusammenfassung:Methods for removing, reducing or treating the trace metal contaminants and the smaller fine sized cerium oxide particles from cerium oxide particles, cerium oxide slurry or chemical mechanical polishing (CMP) compositions for Shallow Trench Isolation (STI) process are applied. The treated chemical mechanical polishing (CMP) compositions, or the CMP polishing compositions prepared by using the treated cerium oxide particles or the treated cerium oxide slurry are used to polish substrate that contains at lease a surface comprising silicon dioxide film for STI (Shallow trench isolation) processing and applications. The reduced nano-sized particle related defects have been observed due to the reduced trace metal ion contaminants and reduced very smaller fine cerium oxide particles in the Shallow Trench Isolation (STI) CMP polishing.