SEMICONDUCTOR DEVICE HAVING METAL GATE AND MANUFACTURING METHOD THEREOF

A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on th...

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Bibliographische Detailangaben
Hauptverfasser:	CHEN YEN-MING, TSAI TENGUN, LIN CHIH-HSUN, HSU CHUN-WEI, HUANG PONG, CHEN CHIA-HSI, KUNG CHANG-HUNG, HSU CHIA-LIN
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	A semiconductor device having a metal gate includes a substrate having a plurality of shallow trench isolations (STIs) formed therein, at least a metal gate positioned on the substrate, and at least a pair of auxiliary dummy structures respectively positioned at two sides of the metal gate and on the substrate.