METHOD AND APPARATUS FOR THERMAL CONTROL OF ION SOURCES AND SPUTTERING TARGETS

A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. T...

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Bibliographische Detailangaben
1. Verfasser:	BASSOM NEIL J
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS BLASTING ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY HEAT EXCHANGE IN GENERAL HEAT-EXCHANGE APPARATUS, NOT PROVIDED FOR IN ANOTHER SUBCLASS,IN WHICH THE HEAT-EXCHANGE MEDIA DO NOT COME INTO DIRECT CONTACT HEATING LIGHTING MECHANICAL ENGINEERING SEMICONDUCTOR DEVICES WEAPONS
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Beschreibung
Zusammenfassung:	A method and apparatus are disclosed for controlling a semiconductor process temperature. In one embodiment a thermal control device includes a heat source and a housing comprising a vapor chamber coupled to the heat source. The vapor chamber includes an evaporator section and a condenser section. The evaporator section has a first wall associated with the heat source, the first wall having a wick for drawing a working fluid from a lower portion of the vapor chamber to the evaporator section. The condenser section coupled to a cooling element. The vapor chamber is configured to transfer heat from the heat source to the cooling element via continuous evaporation of the working fluid at the evaporator section and condensation of the working fluid at the condenser section. Other embodiments are disclosed and claimed.