SHIFT REGISTER AND FLAT PANEL DISPLAY DEVICE HAVING THE SAME

The present disclosure relates to a shift register, and more particularly, a shift register having a sensing circuit for quantitatively measuring a threshold voltage shifted level of a thin film transistor, which is deteriorated due to a continuously applied direct-current (DC) voltage, in a shift register having thin film transistors using oxide silicon as an active layer. The present disclosure may provide a shift register capable of overcoming an erroneous operation caused due to lowering of device characteristics, by further connecting a sensing transistor to thin film transistors configuring the shift register formed on a display panel to sense a level of threshold voltage shift, and driving the shift register by dividing one frame into odd and even periods according to the sensing result.