METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL

METHOD FOR PRODUCING A SILICON SINGLE CRYSTAL

A silicon single crystal is produced by a method wherein a silicon plate is inductively heated; granular silicon is melted on the silicon plate; and the molten silicon thus produced flows through a flow conduit in the center of the plate to a phase boundary at which a silicon single crystal crystall...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: LOBMEYER JOSEF, BRENNINGER GEORG, STEIN WALDEMAR
Format: Patent
Sprache:eng
Schlagworte:
AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUSPOLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE
APPARATUS THEREFOR
CHEMISTRY
CRYSTAL GROWTH
METALLURGY
PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
REFINING BY ZONE-MELTING OF MATERIAL
SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITHDEFINED STRUCTURE
SINGLE-CRYSTAL-GROWTH
UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL ORUNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL
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Beschreibung
Zusammenfassung:A silicon single crystal is produced by a method wherein a silicon plate is inductively heated; granular silicon is melted on the silicon plate; and the molten silicon thus produced flows through a flow conduit in the center of the plate to a phase boundary at which a silicon single crystal crystallizes, wherein a silicon ring having a lower resistivity than the plate, and lying on the plate, is inductively heated prior to inductively heating the plate, and melting the ring.