RESISTIVE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

RESISTIVE MEMORY DEVICE AND PROGRAMMING METHOD THEREOF

A method for programming a resistive memory device includes: programming a resistive memory; generating a verification data based on comparison result of a voltage, which is generated from a current flowing through the resistive memory, and a verification reference voltage which is higher than a rea...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM YOUNCHEUL, JEONG JEONGSU, KANG YONGGU
Format: Patent
Sprache:eng
Schlagworte:
INFORMATION STORAGE
PHYSICS
STATIC STORES
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Beschreibung
Zusammenfassung:A method for programming a resistive memory device includes: programming a resistive memory; generating a verification data based on comparison result of a voltage, which is generated from a current flowing through the resistive memory, and a verification reference voltage which is higher than a read reference voltage used for a normal read operation; and deciding whether to end a program operation based on the verification data.