SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND A METHOD FOR FABRICATING THE SAME

A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate patt...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KANG SANG-BOM, JEON YONG-HO, LEE SEUNG-JAE, LEE JUNGAN, KWAK DAE-YOUNG, KIM MYEONGOL
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device including: a first gate pattern disposed in a peripheral region of a substrate; a second gate pattern disposed in a cell region of the substrate; a first insulator formed on sidewalls of the first gate pattern; and a second insulator formed on sidewalls of the second gate pattern, wherein a dielectric constant of the first insulator is different from a dielectric constant of the second insulator, and wherein a height of the second insulator is greater than a height of the second gate pattern.