METHODS OF FABRICATING A SEMICONDUCTOR DEVICE

A method of fabricating a semiconductor device includes forming an etch-target layer on a substrate having an alignment key, forming a transparent first pattern on the etch-target layer to face the alignment key, forming an opaque second pattern on the etch-target layer to be adjacent to the first p...

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Bibliographische Detailangaben
Hauptverfasser: KIM HYONGSOO, KIM JOON, YOO WONSEOK
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:A method of fabricating a semiconductor device includes forming an etch-target layer on a substrate having an alignment key, forming a transparent first pattern on the etch-target layer to face the alignment key, forming an opaque second pattern on the etch-target layer to be adjacent to the first pattern, and etching the etch-target layer using the first pattern and the second pattern as an etch mask.